APU故障智能诊断系统设计

针对高旋环境下测试困难、测量精度低这一问题,提出了一种能在高旋环境下实现轴向减速装置,以达到稳定的良好的测试环境。该装置通过驱动仓内大量程陀螺仪测得的转速反馈给控制系统,控制系统输出控制信号来控制伺服电机,同时电机捷联内筒仓,使其相对外部转动方向反向旋转,实现轴向减速。实验结果表明,该装置可在高旋弹药飞行过程中提供稳定测试环境,从而得到更精准的姿态解算结果,为高旋环境下的测试提供了新的思路,具有广阔的应用前景。     

铜锌锡硫薄膜材料及其器件应用研究进展

铜锌锡硫薄膜材料组成元素储量丰富, 环境友好, 成本低廉, 成为最具前景的薄膜材料之一. 目前, Cu₂ZnSn(S, Se)₄ (CZTSSe)薄膜太阳电池的最高转换效率已经达到12.6%. 本文总结了Cu₂ZnSnS₄ (CZTS)的发展历史, 依次介绍了CZTS薄膜材料的结构特性、光学特性、电学特性、界面特性和Na对CZTS 薄膜的影响, 详细介绍了CZTS薄膜的制备方法及器件应用的最新研究进展, 总结了目前CZTS薄膜太阳电池发展中存在的问题, 展望了今后的研究方向.     

一种基于微波谐振测量Sagnac效应的新方案

目前光学陀螺的主要工作原理是Sagnac效应, 如何提高Sagnac效应的测量精度是提高陀螺精度的一个重要研究课题. 传统的光学陀螺利用光短波长的特性来提高检测精度. 但考虑到微波的相位(频率)检测精度远高于光波的相位(频率)检测精度, 如果能够利用微波实现Sagnac效应的检测, 就能得到比光学陀螺更高的检测精度, 从而为实现高精度的微波陀螺提供了可能. 利用基于光电振荡器的光载微波结构实现了微波Sagnac效应的检测. 实验结果证明了微波检测Sagnac效应的可行性, 为将来实现高精度的微波谐振陀螺打下基础.     

电荷耦合器件在质子辐照下的粒子输运仿真与效应分析

应用蒙特卡洛方法计算了质子在科学级电荷耦合器件(charge-coupled device, CCD) 结构中的能量沉积, 并结合该CCD的质子辐照试验及退火试验数据, 分析了器件的辐射损伤机理. 仿真计算体硅内沉积的位移损伤剂量和栅氧化层的电离损伤剂量, 辐照与退火试验过程中主要考察暗信号、电荷转移效率两个参数的变化规律. 研究结果显示, 暗信号和电荷转移效率的变化规律与位移、电离损伤剂量一致; 退火后暗信号大幅度降低, 辐照导致的表面暗信号增加占总暗信号增加的比例至少为80%; 退火后电荷转移效率恢复较小, 电荷转移效率降低的原因主要为体缺陷. 通过总结试验规律, 推导出了电荷转移效率退化程度的预估公式及其损伤因子k_damage.     

Extended X‐ray absorption fine structure and multiple‐scattering simulation of nickel dithiolene complexes Ni[S2C2(CF3)2]2n (n = −2, −1, 0) and an olefin adduct Ni[S2C2(CF3)2]2(1‐hexene)

A series of Ni dithiolene complexes Ni[S₂C₂(CF₃)]₂ⁿ (n = ?2, ?1, 0) ( 1 , 2 , 3 ) and a 1‐hexene adduct Ni[S₂C₂(CF₃)₂]₂(C₆H₁₂) ( 4 ) have been examined by Ni K‐edge X‐ray absorption near‐edge structure (XANES) and extended X‐ray absorption fine‐structure (EXAFS) spectroscopies. Ni XANES for 1 – 3 reveals clear pre‐edge features and approximately +0.7 eV shift in the Ni K‐edge position for `one‐electron' oxidation. EXAFS simulation shows that the Ni—S bond distances for 1 , 2 and 3 (2.11–2.16 Å) are within the typical values for square planar complexes and decrease by ～0.022 Å for each `one‐electron' oxidation. The changes in Ni K‐edge energy positions and Ni—S distances are consistent with the `non‐innocent' character of the dithiolene ligand. The Ni—C interactions at ～3.0 Å are analyzed and the multiple‐scattering parameters are also determined, leading to a better simulation for the overall EXAFS spectra. The 1‐hexene adduct 4 presents no pre‐edge feature, and its Ni K‐edge position shifts by ?0.8 eV in comparison with its starting dithiolene complex 3 . Consistently, EXAFS also showed that the Ni—S distances in 4 elongate by ～0.046 Å in comparison with 3 . The evidence confirms that the neutral complex is `reduced' upon addition of olefin, presumably by olefin donating the π‐electron density to the LUMO of 3 as suggested by UV/visible spectroscopy in the literature.     

有限元计算中疏密网格过渡方法研究

工程计算中出于节省计算量的目的,往往需要在一个有限元模型中布置粗细不同的网格。为保证计算结果的准确性,必须保证网格突变情况下的位移协调问题。本文工作之一是在强天驰界面过渡单元的基础上,引入虚拟节点和子单元,在子单元中应用节理元思想,提出了基于最小势能原理的弹簧节理单元法。简化了积分运算,避免了精度要求极高的坐标转换,从而提高了方法的精度和实用性;二是提出了基于位移约束的主从自由度法,简便实用,只需简单的矩阵运算即可实现。两种方法均实现了不同尺寸网格间位移的协调性和刚度的匹配,从而使之满足有限元收敛准则,且生成的刚度阵具有对称性及带状性。算例证明两种方法精度良好,并可方便地应用于求解大规模工程问题。     

Coherent fine scale eddies in turbulence transition of spatially-developing mixing layer

To investigate the relationship between characteristics of the coherent fine scale eddy and a laminar–turbulent transition, a direct numerical simulation (DNS) of a spatially-developing turbulent mixing layer with Re_ω,0 = 700 was conducted. On the onset of the transition, strong coherent fine scale eddies appears in the mixing layer. The most expected value of maximum azimuthal velocity of the eddy is 2.0 times Kolmogorov velocity (u_k), and decreases to 1.2u_k, which is an asymptotic value in the fully-developed state, through the transition. The energy dissipation rate around the eddy is twice as high compared with that in the fully-developed state. However, the most expected diameter and eigenvalues ratio of strain rate acting on the coherent fine scale eddy are maintained to be 8 times Kolmogorov length (η) and :β:γ = −5:1:4 in the transition process. In addition to Kelvin–Helmholtz rollers, rib structures do not disappear in the transition process and are composed of lots of coherent fine scale eddies in the fully-developed state instead of a single eddy observed in early stage of the transition or in laminar flow.     

基于器件结构提高TADF-OLED器件的发光性能

为了提高以TADF材料作为主体、天蓝色荧光材料作为客体的混合薄膜的OLED器件光电性能,我们调整了器件结构,使主体材料发挥其优势。制备了基本结构为ITO/NPB(40 nm)/DMAC-DPS∶x%BUBD-1(40 nm)/Bphen(30 nm)/LiF(0.5 nm)/Al的OLED器件。研究了主-客体材料在不同掺杂浓度下的OLED器件的光电特性。为了提高主体材料的利用率,在空穴传输层和发光层之间加入10 nm的DMAC-DPS作为间隔层;然后,在阳极和空穴传输层之间加入HAT-CN作为空穴注入层,形成HAT-CN/NPB结构的PN结,有效降低了器件的启亮电压(2.7 V)。测量了有无HAT-CN的单空穴器件的阻抗谱。结果表明,在最佳掺杂比例(2%)下,器件的外量子效率(EQE)达到4.92%,接近荧光OLED的EQE理论极限值;加入10 nm的DMAC-DPS作为间隔层,使得器件的EQE达到5.37%;HAT-CN/NPB结构的PN结有效地降低了器件的启亮电压(2.7 V),将OLED器件的EQE提高到5.76%;HAT-CN的加入提高了器件的空穴迁移率,降低了单空穴器件的阻抗。TADF材料作为主体材料在提高OLED器件的光电性能方面具有很大的潜力。     

Surface modulated hierarchical graphene film via sulfur and phosphorus dual-doping for high performance flexible supercapacitors

The steam-assistant heteroatoms of sulfur and phosphorus dual-doped graphene film fabricated via an ice-template and thermal-activation approach demonstrates an excellent pseudocapacitive behavior in flexible electrochemical capacitors.